본문

  1. Home
1000 Results:AA:HONG W C 0.321 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
941
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
942
Atomic Structure of a Metastable, c(2 × 2) Mn Surface Alloy on Pd(001)
Atomic Structure of a Metastable, c(2 × 2) Mn Surface Alloy on Pd(001)
S. H. Kim, | 한국물리학회 | 2006 ,
943
Neutron-Detection Efficiency of Hybrid Resistive Plate Chambers as Estimated by Using the MC50 Cyclotron at KIRAMS
Neutron-Detection Efficiency of Hybrid Resistive Plate Chambers as Estimated by Using the MC50 Cyclotron at KIRAMS
B. Hong, | 한국물리학회 | 2006 ,
944
Energy Dependence of the Entropy Production in Relativistic Heavy-Ion Collisions
Energy Dependence of the Entropy Production in Relativistic Heavy-Ion Collisions
Byungsik Hong, | 한국물리학회 | 2006 ,
945
Deterministic Secure Quantum Communication Without Maximally Entangled States
Deterministic Secure Quantum Communication Without Maximally Entangled States
Xi-Han Li, | 한국물리학회 | 2006 ,
946
The Magnetospheres of Black Holes and Neutron Stars(Pulsars)
The Magnetospheres of Black Holes and Neutron Stars(Pulsars)
Hongsu Kim, | 한국물리학회 | 2006 ,
947
Atomic Layer Deposition of La₂O₃Thin films by Using an Electron Cyclotron Resonance Plasma Source
Atomic Layer Deposition of La₂O₃Thin films by Using an Electron Cyclotron Resonance Plasma Source
Beom-Yong Kim, | 한국물리학회 | 2006 ,
948
Development of New Method to Fabricate a Conductive Ball for an Anisotropic Conductive Film
Development of New Method to Fabricate a Conductive Ball for an Anisotropic Conductive Film
Mi Jung Lee, | 한국물리학회 | 2006 ,
949
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Se-Hyun Kim, | 한국물리학회 | 2006 ,
950
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Y. W. Kim, | 한국물리학회 | 2006 ,
처음이전90919293949596979899이후마지막