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891
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
892
Magnetotransport Measurements on an AlGaN/GaN Two-Dimensional Electron System
Magnetotransport Measurements on an AlGaN/GaN Two-Dimensional Electron System
Jyun-Ying Lin, | 한국물리학회 | 2006 ,
893
The Structure and Magnetic Properties of High Electrical Resistivity Granular Films
The Structure and Magnetic Properties of High Electrical Resistivity Granular Films
Won-Jung Jung, | 한국물리학회 | 2006 ,
894
Anisotropic X-ray Rocking Curve Due to a Damaged Surface Layer in a Freestanding GaN Thick Film
Anisotropic X-ray Rocking Curve Due to a Damaged Surface Layer in a Freestanding GaN Thick Film
S. H. Park, | 한국물리학회 | 2006 ,
895
Roles of Kinetics and Energetics in the Growth of AIN by Plasma-Assisted Molecular Beam Epitaxy
Roles of Kinetics and Energetics in the Growth of AIN by Plasma-Assisted Molecular Beam Epitaxy
I. H. Im, | 한국물리학회 | 2006 ,
896
Characterization of MBE-Grown ZnSe Thin Films by Using Photocurrent Spectroscopy
Characterization of MBE-Grown ZnSe Thin Films by Using Photocurrent Spectroscopy
M. H. Jung, | 한국물리학회 | 2006 ,
897
DePendence of the Optical Trapping Efficiency of a Biconcave Red Blood Cell Flowing In a Rectangular Microchannel on the Sphericity Index and the Channel Geometry
DePendence of the Optical Trapping Efficiency of a Biconcave Red Blood Cell Flowing In a Rectangular Microchannel on the Sphericity Index and the Channel Geometry
Won Gu Lee, | 한국물리학회 | 2006 ,
898
Evaluation of the Localized Residual Strain States of GaN Layers by Using a TEM-CBED Method
Evaluation of the Localized Residual Strain States of GaN Layers by Using a TEM-CBED Method
Hui-Youn Shin, | 한국물리학회 | 2006 ,
899
Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
H. J. Lee, | 한국물리학회 | 2006 ,
900
Mask Error Enhancement Factor Variation With Pattern Density for 65 nm and 90 nm Line Widths
Mask Error Enhancement Factor Variation With Pattern Density for 65 nm and 90 nm Line Widths
Hye-Young Kang, | 한국물리학회 | 2006 ,
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