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841
A Study of the Electrical Properties at the Interface in MIS Structure with Low-Dielectric-Constant SiOC(-H) Films Deposited by Using UV-Source -Assisted PECVD
A Study of the Electrical Properties at the Interface in MIS Structure with Low-Dielectric-Constant SiOC(-H) Films Deposited by Using UV-Source -Assisted PECVD
Chang Young Kim, | 한국물리학회 | 2007 ,
842
Formation Mechanism and Structural Characteristics of Low-Dielectric-Constant SiOC(-H) Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition with DMDMS and O₂ Precursors
Formation Mechanism and Structural Characteristics of Low-Dielectric-Constant SiOC(-H) Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition with DMDMS and O₂ Precursors
Chang Young Kim, | 한국물리학회 | 2007 ,
843
Study of SnO₂Nanorods Coated Using the PECVD Technique
Study of SnO₂Nanorods Coated Using the PECVD Technique
Hyoun Woo Kim, | 한국물리학회 | 2007 ,
844
Physical Properties of RF-Sputtered ZnO Thin Films : Effects of Two-Step Deposition
Physical Properties of RF-Sputtered ZnO Thin Films : Effects of Two-Step Deposition
Jin-Bock Lee, | 한국물리학회 | 2007 ,
845
Large-Scale Fixed Point of Forced Plasmas
Large-Scale Fixed Point of Forced Plasmas
Chang Bae Kim, | 한국물리학회 | 2007 ,
846
Analysis of Surface Relief Gratings on Azo Polymer Films
Analysis of Surface Relief Gratings on Azo Polymer Films
Cha-Hwan Oh, | 한국물리학회 | 2007 ,
847
Particle Property of Photons in the Photon Statistics of Feedback-Controlled Lasers
Particle Property of Photons in the Photon Statistics of Feedback-Controlled Lasers
Yoonshik Kang, | 한국물리학회 | 2007 ,
848
835-nm GaAs/AlGaAs High-Power Laser Diode for Up-Conversion Fiber Lasers
835-nm GaAs/AlGaAs High-Power Laser Diode for Up-Conversion Fiber Lasers
Byungjin Ma, | 한국물리학회 | 2007 ,
849
Optiminzation of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses
Optiminzation of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses
Young Chul Shin, | 한국물리학회 | 2007 ,
850
Electron-Electron Interactions in a Two-dimensional Electron Systemin an Al0.15Ga0.85N/GaN Heterostructure Grown on Ρ-Type Si
Electron-Electron Interactions in a Two-dimensional Electron Systemin an Al0.15Ga0.85N/GaN Heterostructure Grown on Ρ-Type Si
Jian-Zhe Huang, | 한국물리학회 | 2007 ,
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