본문

  1. Home
1000 Results:AA:J C CHOI 0.843 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
831
Development of a Separation Algorithm for Peak Signals and Its Application to Event-Related Brain Potentials
Development of a Separation Algorithm for Peak Signals and Its Application to Event-Related Brain Potentials
Byung-Il Yoo, | 한국물리학회 | 2006 ,
832
Analysis of the Piezoelectric Resonance Signal Detected Through the Inductive Pluse Method of Piezoelectric Resonance
Analysis of the Piezoelectric Resonance Signal Detected Through the Inductive Pluse Method of Piezoelectric Resonance
Jongchan Lee, | 한국물리학회 | 2006 ,
833
Dependence of the Material Properties and PDP Discharging Characteristics on the MgO Evaporation Rate
Dependence of the Material Properties and PDP Discharging Characteristics on the MgO Evaporation Rate
Hyung Wook Choi, | 한국물리학회 | 2006 ,
834
Design and Fabrication of the Double-Sided Silicon Microstrip Sensor
Design and Fabrication of the Double-Sided Silicon Microstrip Sensor
H. Park, | 한국물리학회 | 2006 ,
835
Study on the Energy-Band Structure of an InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetector Structure
Study on the Energy-Band Structure of an InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetector Structure
J. S. Kim, | 한국물리학회 | 2006 ,
836
Electro-Physical Properties of a Si-Based MIS Structure with a Low-Bftextitk SiOC(-H) Film
Electro-Physical Properties of a Si-Based MIS Structure with a Low-Bftextitk SiOC(-H) Film
Anvar Sagatovich Zakirov, | 한국물리학회 | 2006 ,
837
Low-Temperature Sintering and Microwave Dielectric Properties of Ba₃Ti₄-xZrxNb₄O₂₁ Ceramics with the Substitution of Zr for Ti
Low-Temperature Sintering and Microwave Dielectric Properties of Ba₃Ti₄-xZrxNb₄O₂₁ Ceramics with the Substitution of Zr for Ti
Won-Jun Ko, | 한국물리학회 | 2006 ,
838
Synthesis of SnO₂ Nanowires and Their Gas Sensing Characteristics
Synthesis of SnO₂ Nanowires and Their Gas Sensing Characteristics
In-Sung Hwang, | 한국물리학회 | 2006 ,
839
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
840
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
kwang Woong Kim, | 한국물리학회 | 2006 ,
처음이전79808182838485868788이후마지막