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781
Size Analysis of CdSe/ZnS Quantum Dots in Aqueous Solution by Using Laser-Induced Breakdown Detection
Size Analysis of CdSe/ZnS Quantum Dots in Aqueous Solution by Using Laser-Induced Breakdown Detection
Ji-woong Kim., | 한국물리학회 | 2006 ,
782
Inner Tracker Design Studies for a Large Gaseous Tracker Detector
Inner Tracker Design Studies for a Large Gaseous Tracker Detector
E. Won., | 한국물리학회 | 2006 ,
783
Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition
Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition
Kannan Meera., | 한국물리학회 | 2006 ,
784
A study on the Plasma Parameters and Characteristics of Carbon-Doped Silicon-Oxide Films by Using MTMS/O₂ and He Plasmas
A study on the Plasma Parameters and Characteristics of Carbon-Doped Silicon-Oxide Films by Using MTMS/O₂ and He Plasmas
Min Sung Kang., | 한국물리학회 | 2006 ,
785
Application of a High-Durability DC arc Plasmatron to Plasma-Chemical Processing of Silicon Substrates
Application of a High-Durability DC arc Plasmatron to Plasma-Chemical Processing of Silicon Substrates
Valentin A. Riaby., | 한국물리학회 | 2006 ,
786
Post-Annealing Effect on SiOC(-H) Composite Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition
Post-Annealing Effect on SiOC(-H) Composite Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition
Kyoung Suk Oh., | 한국물리학회 | 2006 ,
787
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Wonjoon Choi., | 한국물리학회 | 2006 ,
788
Characteristics of 1.56-πm­ Quantum-Dot-Distributed Feedback Lasers
Characteristics of 1.56-πm­ Quantum-Dot-Distributed Feedback Lasers
Dong Sup Kim., | 한국물리학회 | 2006 ,
789
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
N. I. Cho., | 한국물리학회 | 2006 ,
790
Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method
Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method
Jungyup Yang., | 한국물리학회 | 2006 ,
처음이전74757677787980818283이후마지막
1
North Korea in Transition and Policy Choices
경남대학교 극동문제연구소 [정치학, ]