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761
Why Is It Difficult to Cancel Clausal Implicatures?
Why Is It Difficult to Cancel Clausal Implicatures?
Song, Jae-gyun, | 새한영어영문학회 | 2006 ,
762
New Comedy Conventions in Thomas Middleton's A Chaste Maid in Cheapside
New Comedy Conventions in Thomas Middleton's A Chaste Maid in Cheapside
Song, Won-Moon, | 새한영어영문학회 | 2007 ,
763
Aggregation-Induced Emission Enhancement of Polysilole Nanoaggregates
Aggregation-Induced Emission Enhancement of Polysilole Nanoaggregates
Seunghyun Jang, | 대한화학회 | 2006 ,
764
Efficient and General One-pot Synthesis of β-Chloro-β-trifluoromethylated Enones from 3,3,3-Trifluoropropyne
Efficient and General One-pot Synthesis of β-Chloro-β-trifluoromethylated Enones from 3,3,3-Trifluoropropyne
Sung Lan Jeon, | 대한화학회 | 2006 ,
765
4H-SiC Planar MESFET for Microwave Power Device Applications
4H-SiC Planar MESFET for Microwave Power Device Applications
Hoon Joo Na, | 대한전자공학회 | 2005 ,
766
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Wanjun Park, | 대한전자공학회 | 2002 ,
767
On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications
On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications
Youn S. Noh, | 대한전자공학회 | 2003 ,
768
Process Optimization for High Frequency Performance of InP-Based Heterojunction Bipolar Transistors
Process Optimization for High Frequency Performance of InP-Based Heterojunction Bipolar Transistors
Yongjoo Song, | 대한전자공학회 | 2003 ,
769
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
I-H.Kang, | 대한전자공학회 | 2003 ,
770
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
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