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671
Manner Assimilation and Roles of OCP-SV in Korean
Manner Assimilation and Roles of OCP-SV in Korean
Shin, Seung-Hoon, | 새한영어영문학회 | 2006 ,
672
Richness of the Base and Underlying Representation in Loanword Phonology
Richness of the Base and Underlying Representation in Loanword Phonology
Shin, Seung Hoon, | 새한영어영문학회 | 2005 ,
673
Synthesis of Medium Sized Rings from the Cycloadducts of 3,5-Dibromo-2-pyrone via a Radical Mediated Fragmentation Reaction
Synthesis of Medium Sized Rings from the Cycloadducts of 3,5-Dibromo-2-pyrone via a Radical Mediated Fragmentation Reaction
Jae-Hee Choi, | 대한화학회 | 2006 ,
674
CeO2-Promoted Highly Active Catalyst, NiSO4/CeO2-ZrO2 for Ethylene Dimerization
CeO2-Promoted Highly Active Catalyst, NiSO4/CeO2-ZrO2 for Ethylene Dimerization
Young Il Pae, | 대한화학회 | 2006 ,
675
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
676
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Byoung-Gon Yu, | 대한전자공학회 | 2002 ,
677
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
678
A New EEPROM with Side Floating Gates having Different Work Function from Control Gate
A New EEPROM with Side Floating Gates having Different Work Function from Control Gate
Youngjoon Ahn, | 대한전자공학회 | 2002 ,
679
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Ho Won Jang, | 대한전자공학회 | 2003 ,
680
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
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