본문

  1. Home
1000 Results:AA:S H SHIN 1.390 sec.
RSS 
Multilingual
 Расширенный поиск
 Новый поиск книги прибытия
Selected Print Select Export to Excel
671
Richness of the Base and Underlying Representation in Loanword Phonology
Richness of the Base and Underlying Representation in Loanword Phonology
Shin, Seung Hoon, | 새한영어영문학회 | 2005 ,
672
Synthesis of Medium Sized Rings from the Cycloadducts of 3,5-Dibromo-2-pyrone via a Radical Mediated Fragmentation Reaction
Synthesis of Medium Sized Rings from the Cycloadducts of 3,5-Dibromo-2-pyrone via a Radical Mediated Fragmentation Reaction
Jae-Hee Choi, | 대한화학회 | 2006 ,
673
CeO2-Promoted Highly Active Catalyst, NiSO4/CeO2-ZrO2 for Ethylene Dimerization
CeO2-Promoted Highly Active Catalyst, NiSO4/CeO2-ZrO2 for Ethylene Dimerization
Young Il Pae, | 대한화학회 | 2006 ,
674
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
675
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Byoung-Gon Yu, | 대한전자공학회 | 2002 ,
676
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
677
A New EEPROM with Side Floating Gates having Different Work Function from Control Gate
A New EEPROM with Side Floating Gates having Different Work Function from Control Gate
Youngjoon Ahn, | 대한전자공학회 | 2002 ,
678
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Ho Won Jang, | 대한전자공학회 | 2003 ,
679
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
680
Advances in MEMS Based Planar VOA
Advances in MEMS Based Planar VOA
ChengKuo Lee, | 대한전자공학회 | 2007 ,
처음이전63646566676869707172이후마지막