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651
Online System for Normalizing Data Acquired by the Fermilav do Experiment
Online System for Normalizing Data Acquired by the Fermilav do Experiment
Sung Keun Park, | 한국물리학회 | 2006 ,
652
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
653
Atomic Structure of a Metastable, c(2 × 2) Mn Surface Alloy on Pd(001)
Atomic Structure of a Metastable, c(2 × 2) Mn Surface Alloy on Pd(001)
S. H. Kim, | 한국물리학회 | 2006 ,
654
Neutron-Detection Efficiency of Hybrid Resistive Plate Chambers as Estimated by Using the MC50 Cyclotron at KIRAMS
Neutron-Detection Efficiency of Hybrid Resistive Plate Chambers as Estimated by Using the MC50 Cyclotron at KIRAMS
B. Hong, | 한국물리학회 | 2006 ,
655
Development of New Method to Fabricate a Conductive Ball for an Anisotropic Conductive Film
Development of New Method to Fabricate a Conductive Ball for an Anisotropic Conductive Film
Mi Jung Lee, | 한국물리학회 | 2006 ,
656
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Se-Hyun Kim, | 한국물리학회 | 2006 ,
657
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Y. W. Kim, | 한국물리학회 | 2006 ,
658
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Nambin Kim, | 한국물리학회 | 2006 ,
659
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
660
Characterization of Bulk Metallic Contamination in Epitaxial Wafers
Characterization of Bulk Metallic Contamination in Epitaxial Wafers
Sangwook Wee, | 한국물리학회 | 2006 ,
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