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651
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
652
Growth of Crack-Free GaN Films on Si(111) Substrates with AIN Buffer Layers
Growth of Crack-Free GaN Films on Si(111) Substrates with AIN Buffer Layers
Doek Kyu Kim, | 한국물리학회 | 2006 ,
653
InVestigation of the Magnetic Properties of an RF-Driven Inductively Coupled Argon Plasma
InVestigation of the Magnetic Properties of an RF-Driven Inductively Coupled Argon Plasma
O. Vozniy, | 한국물리학회 | 2006 ,
654
Neutron-Detection Efficiency of Hybrid Resistive Plate Chambers as Estimated by Using the MC50 Cyclotron at KIRAMS
Neutron-Detection Efficiency of Hybrid Resistive Plate Chambers as Estimated by Using the MC50 Cyclotron at KIRAMS
B. Hong, | 한국물리학회 | 2006 ,
655
Atomic Layer Deposition of La₂O₃Thin films by Using an Electron Cyclotron Resonance Plasma Source
Atomic Layer Deposition of La₂O₃Thin films by Using an Electron Cyclotron Resonance Plasma Source
Beom-Yong Kim, | 한국물리학회 | 2006 ,
656
Lanthanum-Oxide thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Lanthanum-Oxide thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Eun-Joo Lee, | 한국물리학회 | 2006 ,
657
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
658
Magnetotransport Measurements on an AlGaN/GaN Two-Dimensional Electron System
Magnetotransport Measurements on an AlGaN/GaN Two-Dimensional Electron System
Jyun-Ying Lin, | 한국물리학회 | 2006 ,
659
Surface Investigation of a Cubic AIN Buffer Layer and GaN Grown on Si (111) and (100) as Revealed by Atomic force Microscopy
Surface Investigation of a Cubic AIN Buffer Layer and GaN Grown on Si (111) and (100) as Revealed by Atomic force Microscopy
M. K. Bae, | 한국물리학회 | 2006 ,
660
Oxygen Pressure Dependent Resistance-Switching Properties of Nickel-Oxide Films Grown by Using a Pulsed Laser Deposition Method
Oxygen Pressure Dependent Resistance-Switching Properties of Nickel-Oxide Films Grown by Using a Pulsed Laser Deposition Method
Seung Eon Moon, | 한국물리학회 | 2006 ,
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