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631
Effect of NH₃Pretreatment on the Surface Morphologies of GaN Films Grown on Miscut Sapphire Substrates by Using Hydride Vapor Phase Epitaxy
Effect of NH₃Pretreatment on the Surface Morphologies of GaN Films Grown on Miscut Sapphire Substrates by Using Hydride Vapor Phase Epitaxy
Sanghwa Lee, | 한국물리학회 | 2007 ,
632
Annealing Behavior of Bi₂Te₃ Thermoelectric Semiconductor Electrodeposited for Nanowire Applications
Annealing Behavior of Bi₂Te₃ Thermoelectric Semiconductor Electrodeposited for Nanowire Applications
Min-Young Kim, | 한국물리학회 | 2007 ,
633
Origin of Ultrahigh Dielectric Constants for Barium Titanate Nanoparticles
Origin of Ultrahigh Dielectric Constants for Barium Titanate Nanoparticles
S. Wada, | 한국물리학회 | 2007 ,
634
Measurement of Isomeric Cross-Section Ratios for the 45Sc(γ,n)44m.gSc, natTi(γ, χ)44m.gSc, 103Rh(γ,4n)99m,gRh, and natFe(γ, χ)52m,gMn Reactions Induced by 65-MeV Bremsstrahlung
Measurement of Isomeric Cross-Section Ratios for the 45Sc(γ,n)44m.gSc, natTi(γ, χ)44m.gSc, 103Rh(γ,4n)99m,gRh, and natFe(γ, χ)52m,gMn Reactions Induced by 65-MeV Bremsstrahlung
Van Do Nguyen, | 한국물리학회 | 2007 ,
635
Measurement of the keV-Neutron Capture Cross-Sections and Capture Γ-Ray Spectra of 155Gd and 157Gd
Measurement of the keV-Neutron Capture Cross-Sections and Capture Γ-Ray Spectra of 155Gd and 157Gd
Won-Chung Chung, | 한국물리학회 | 2007 ,
636
Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates
Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates
Y. K. Noh, | 한국물리학회 | 2007 ,
637
Electrical and Optical Properties of a GaN n+-p JUnction with High-Energy Electron Irradiation
Electrical and Optical Properties of a GaN n+-p JUnction with High-Energy Electron Irradiation
Dong Uk Lee, | 한국물리학회 | 2007 ,
638
Calculation of the Tunneling Current and the Noise for a Radio-Frequency Single Electron Transistor Based on a Green's function Approach
Calculation of the Tunneling Current and the Noise for a Radio-Frequency Single Electron Transistor Based on a Green's function Approach
J. H. Oh, | 한국물리학회 | 2007 ,
639
UV-Ozone Surface Treatment of Indium-Tin-Oxide In Organic Light Emitting Diodes
UV-Ozone Surface Treatment of Indium-Tin-Oxide In Organic Light Emitting Diodes
Byoung-Sang Kim, | 한국물리학회 | 2007 ,
640
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Do-Hyun Oh, | 한국물리학회 | 2007 ,
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