본문

  1. Home
1000 Results:AA:JUN JO 0.359 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
621
Solution-phase Synthesis and Preliminary Evaluation of 1,6,8-Trisubstituted Tetrahydro-2H-pyraziono[1,2-a]pyrimidin-4,7- dione Derivatives as a NF-kB Inhibitor
Solution-phase Synthesis and Preliminary Evaluation of 1,6,8-Trisubstituted Tetrahydro-2H-pyraziono[1,2-a]pyrimidin-4,7- dione Derivatives as a NF-kB Inhibitor
Jin-Woong Kim, | 대한화학회 | 2006 ,
622
A Micromachined Two-state Bandpass Filter using Series Inductors and MEMS Switches for WLAN Applications
A Micromachined Two-state Bandpass Filter using Series Inductors and MEMS Switches for WLAN Applications
Jong-Man Kim, | 대한전자공학회 | 2004 ,
623
4H-SiC Planar MESFET for Microwave Power Device Applications
4H-SiC Planar MESFET for Microwave Power Device Applications
Hoon Joo Na, | 대한전자공학회 | 2005 ,
624
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Ki-Yeol Park, | 대한전자공학회 | 2005 ,
625
ViP: A Practical Approach to Platform-based System Modeling Methodology
ViP: A Practical Approach to Platform-based System Modeling Methodology
Junhyung Um, SungPack Hong, Young-Taek Kim, Eui-y, | 대한전자공학회 | 2005 ,
626
Characteristics of Schottky Diode and Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors
Characteristics of Schottky Diode and Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors
Moongyu Jang, | 대한전자공학회 | 2005 ,
627
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
628
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
629
A Novel Sensing Circuit for 2T-2MTJ MRAM Applicable to High speed synchronous Operation
A Novel Sensing Circuit for 2T-2MTJ MRAM Applicable to High speed synchronous Operation
Eun-Jung Jang, | 대한전자공학회 | 2002 ,
630
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Ho Won Jang, | 대한전자공학회 | 2003 ,
처음이전58596061626364656667이후마지막