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541
Fabrication of Two-Dimensional Periodic Structures in an Amorphous Silicon Film by Four-Beam Interference Lithography
Fabrication of Two-Dimensional Periodic Structures in an Amorphous Silicon Film by Four-Beam Interference Lithography
Geon Joon Lee, | 한국물리학회 | 2007 ,
542
Thermal Stability and Adhesion Improvement of Cu(Ag)/Mo Bilayer Metallization in Large-Area TFT-LCDs
Thermal Stability and Adhesion Improvement of Cu(Ag)/Mo Bilayer Metallization in Large-Area TFT-LCDs
H. M. Lee, | 한국물리학회 | 2007 ,
543
Femtosecond Pump-Probe MOKE Microscopy for an Ultrafast Spin Dynamics Study
Femtosecond Pump-Probe MOKE Microscopy for an Ultrafast Spin Dynamics Study
Kyeong-Dong Lee, | 한국물리학회 | 2006 ,
544
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
545
Atomic Structure of a Metastable, c(2 × 2) Mn Surface Alloy on Pd(001)
Atomic Structure of a Metastable, c(2 × 2) Mn Surface Alloy on Pd(001)
S. H. Kim, | 한국물리학회 | 2006 ,
546
Neutron-Detection Efficiency of Hybrid Resistive Plate Chambers as Estimated by Using the MC50 Cyclotron at KIRAMS
Neutron-Detection Efficiency of Hybrid Resistive Plate Chambers as Estimated by Using the MC50 Cyclotron at KIRAMS
B. Hong, | 한국물리학회 | 2006 ,
547
Deterministic Secure Quantum Communication Without Maximally Entangled States
Deterministic Secure Quantum Communication Without Maximally Entangled States
Xi-Han Li, | 한국물리학회 | 2006 ,
548
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Se-Hyun Kim, | 한국물리학회 | 2006 ,
549
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Y. W. Kim, | 한국물리학회 | 2006 ,
550
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
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