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501
Fortran 77 for engineers and scientists : with an Introduction to fortran 90
Fortran 77 for engineers and scientists : with an Introduction to fortran 90
Nyhoff, Larry, 005.13-N995f | Prentice hall | 1996 005.13-N995f,
502
Nonoscale Fabrication in Aqueous Solution using Tribo-Nanolithography
Nonoscale Fabrication in Aqueous Solution using Tribo-Nanolithography
Jeong Woo Park., | 한국정밀공학회 | 2006 ,
503
Derivation and Analysis of the BER Closed Form in the OFDM Communication System with IQ Imbalance
Derivation and Analysis of the BER Closed Form in the OFDM Communication System with IQ Imbalance
Nguyen Thanh Hieu., | 한국전자파학회 | 2006 ,
504
Temperature Changes Caused by 13-MeV Proton Irradiation at the Interface of a Pyrex Glass and a Silicon Wafer
Temperature Changes Caused by 13-MeV Proton Irradiation at the Interface of a Pyrex Glass and a Silicon Wafer
E. H. KIM, | 한국물리학회 | 2006 ,
505
Measurements of the Neutron Total Cross-Sections of Tantalum by Using Pulsed Neutrons Based on an Electron Linac
Measurements of the Neutron Total Cross-Sections of Tantalum by Using Pulsed Neutrons Based on an Electron Linac
A. K. M. Moinul Haque MEAZE, | 한국물리학회 | 2006 ,
506
Thermal Dephasing of Quasi-Phase-Matched Second-Harmonic Generation in Periodically Poled Stoichiometric LiTaO₃ at High Input Power
Thermal Dephasing of Quasi-Phase-Matched Second-Harmonic Generation in Periodically Poled Stoichiometric LiTaO₃ at High Input Power
Nan Ei Yu, | 한국물리학회 | 2006 ,
507
Photo-Neutrons Produced at the Pohang Neutron Facility Based on an Electron Linac
Photo-Neutrons Produced at the Pohang Neutron Facility Based on an Electron Linac
K. Devan., | 한국물리학회 | 2006 ,
508
Studies of Low-Dielectric-Constant SiOC(-H) Thin Films Deposited by Using MTES/O₂-PECVD
Studies of Low-Dielectric-Constant SiOC(-H) Thin Films Deposited by Using MTES/O₂-PECVD
Rangaswamy Navamathavan., | 한국물리학회 | 2006 ,
509
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Wonjoon Choi., | 한국물리학회 | 2006 ,
510
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
N. I. Cho., | 한국물리학회 | 2006 ,
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