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471
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Ki-Yeol Park, | 대한전자공학회 | 2005 ,
472
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
Dan An, Mun-Kyo Lee, Sang-Jin Lee, Du-Hyun Ko, Ji, | 대한전자공학회 | 2005 ,
473
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
474
A New EEPROM with Side Floating Gates having Different Work Function from Control Gate
A New EEPROM with Side Floating Gates having Different Work Function from Control Gate
Youngjoon Ahn, | 대한전자공학회 | 2002 ,
475
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Ho Won Jang, | 대한전자공학회 | 2003 ,
476
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Sung-Woong Chung, | 대한전자공학회 | 2004 ,
477
A Design Guide of 3-stage CMOS Operational Ampifer with Nested Gm-C Frequency Compensation
A Design Guide of 3-stage CMOS Operational Ampifer with Nested Gm-C Frequency Compensation
Jae-Seung Lee, | 대한전자공학회 | 2007 ,
478
A 32mm and 0.9V CMOS Operational Amplifer with Nested Gm-C Frequency Compensation
A 32mm and 0.9V CMOS Operational Amplifer with Nested Gm-C Frequency Compensation
Jae-Seung Lee, | 대한전자공학회 | 2007 ,
479
Displacement Verbs and Speaker-stance Indication
Displacement Verbs and Speaker-stance Indication
Hyun Sook Lee, | 현대문법학회 | 2013 ,
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