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471
Characteristics of boron-Loaded Plastic Scintillators for neutron Measurements
Characteristics of boron-Loaded Plastic Scintillators for neutron Measurements
R. J. Hu, | 한국물리학회 | 2007 ,
472
Characterization of the Evanescent Field in Objective-Based Total-Internal-Reflection Fluorescence (TIRF) Microscopy
Characterization of the Evanescent Field in Objective-Based Total-Internal-Reflection Fluorescence (TIRF) Microscopy
Ja Yil Lee, | 한국물리학회 | 2007 ,
473
Pt-Catalyzed Growth of Amorphous SiOχ Nanowires
Pt-Catalyzed Growth of Amorphous SiOχ Nanowires
Hyoun Woo Kim, | 한국물리학회 | 2007 ,
474
Interdot Coupling in a Si-Based Coupled Double dot Device
Interdot Coupling in a Si-Based Coupled Double dot Device
S. J. Shin, | 한국물리학회 | 2007 ,
475
The Growth Characteristics of a GaN Layer on a Cone-Shaped Patterned Sapphire Substrate by TEM Observation
The Growth Characteristics of a GaN Layer on a Cone-Shaped Patterned Sapphire Substrate by TEM Observation
Hui-Youn Shin, | 한국물리학회 | 2007 ,
476
Study of SnO₂Nanorods Coated Using the PECVD Technique
Study of SnO₂Nanorods Coated Using the PECVD Technique
Hyoun Woo Kim, | 한국물리학회 | 2007 ,
477
Enhanced External Efficiency of InGaN/GaN Quantum Well Light-Emitting Diodes by Mediating Surface Plasmon-Polaritons
Enhanced External Efficiency of InGaN/GaN Quantum Well Light-Emitting Diodes by Mediating Surface Plasmon-Polaritons
Jaewoong Yoon, | 한국물리학회 | 2007 ,
478
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon, | 한국물리학회 | 2007 ,
479
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Dong Ho Kim, | 한국물리학회 | 2007 ,
480
Optiminzation of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses
Optiminzation of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses
Young Chul Shin, | 한국물리학회 | 2007 ,
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