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461
Aggregation-Induced Emission Enhancement of Polysilole Nanoaggregates
Aggregation-Induced Emission Enhancement of Polysilole Nanoaggregates
Seunghyun Jang, | 대한화학회 | 2006 ,
462
Efficient and General One-pot Synthesis of β-Chloro-β-trifluoromethylated Enones from 3,3,3-Trifluoropropyne
Efficient and General One-pot Synthesis of β-Chloro-β-trifluoromethylated Enones from 3,3,3-Trifluoropropyne
Sung Lan Jeon, | 대한화학회 | 2006 ,
463
Exploring On-Chip Bus Architectures for Multitask Applications
Exploring On-Chip Bus Architectures for Multitask Applications
Sungchan Kim, | 대한전자공학회 | 2004 ,
464
Development of Embedded Non-Volatile FRAMs for High Performance Smart Cards
Development of Embedded Non-Volatile FRAMs for High Performance Smart Cards
Kang-Woon Lee, | 대한전자공학회 | 2004 ,
465
Theoretical Calculation and Experimental Verification of the Hf/A1 Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition
Theoretical Calculation and Experimental Verification of the Hf/A1 Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition
Deok-Sin Kil, | 대한전자공학회 | 2005 ,
466
ViP: A Practical Approach to Platform-based System Modeling Methodology
ViP: A Practical Approach to Platform-based System Modeling Methodology
Junhyung Um, SungPack Hong, Young-Taek Kim, Eui-y, | 대한전자공학회 | 2005 ,
467
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
Dan An, Mun-Kyo Lee, Sang-Jin Lee, Du-Hyun Ko, Ji, | 대한전자공학회 | 2005 ,
468
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Byoung-Gon Yu, | 대한전자공학회 | 2002 ,
469
MRAM Technology for High Density Memory Application
MRAM Technology for High Density Memory Application
Chang-Shuk Kim, | 대한전자공학회 | 2002 ,
470
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
Dae-Hyun Kim, | 대한전자공학회 | 2003 ,
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