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451
Floquet States in a Single Quantum Dot Driven by Thz Fields
Floquet States in a Single Quantum Dot Driven by Thz Fields
Koo-Chul Je, | 한국물리학회 | 2006 ,
452
Online System for Normalizing Data Acquired by the Fermilav do Experiment
Online System for Normalizing Data Acquired by the Fermilav do Experiment
Sung Keun Park, | 한국물리학회 | 2006 ,
453
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
454
Deterministic Secure Quantum Communication Without Maximally Entangled States
Deterministic Secure Quantum Communication Without Maximally Entangled States
Xi-Han Li, | 한국물리학회 | 2006 ,
455
Atomic Layer Deposition of La₂O₃Thin films by Using an Electron Cyclotron Resonance Plasma Source
Atomic Layer Deposition of La₂O₃Thin films by Using an Electron Cyclotron Resonance Plasma Source
Beom-Yong Kim, | 한국물리학회 | 2006 ,
456
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Se-Hyun Kim, | 한국물리학회 | 2006 ,
457
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Y. W. Kim, | 한국물리학회 | 2006 ,
458
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Nambin Kim, | 한국물리학회 | 2006 ,
459
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
460
Temperature-Dependent Switching Current of Cr-Doped SrZrO₃/SrRuO₃Deposited for ReRAM Applications by Using PLD
Temperature-Dependent Switching Current of Cr-Doped SrZrO₃/SrRuO₃Deposited for ReRAM Applications by Using PLD
Kyooho Jung, | 한국물리학회 | 2006 ,
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