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546 Results:AA:J S BAE 0.203 sec.
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381
High-Power Pulse Transformer for a 1. 5-MW Magnetron of KSTAR LHCD Microwave Application
High-Power Pulse Transformer for a 1. 5-MW Magnetron of KSTAR LHCD Microwave Application
Sung-Duck Jang, | 한국물리학회 | 2006 ,
382
Cold Test of High Power Dummy Load for ICH Application
Cold Test of High Power Dummy Load for ICH Application
Jong-gu Kwak, | 한국물리학회 | 2006 ,
383
Study of Elliptical Polarization Requirement of KSTAR 84-GHz ECH System
Study of Elliptical Polarization Requirement of KSTAR 84-GHz ECH System
Jinhyun Jeong, | 한국물리학회 | 2006 ,
384
Coarsening Dynamics in a Two-Dimensional XY Model with Hamiltonian Dynamics
Coarsening Dynamics in a Two-Dimensional XY Model with Hamiltonian Dynamics
Kyo-Joon Koo, | 한국물리학회 | 2006 ,
385
Temperature-Dependent Luminescence Characteristics of Al-Doped CaTiO₃：Pr³+ Thin Films
Temperature-Dependent Luminescence Characteristics of Al-Doped CaTiO₃：Pr³+ Thin Films
Hyun Kyoung Yang, | 한국물리학회 | 2006 ,
386
Electric Modulus Scaling behaviors of the Near Stoichiometric Potassium Lithium Niobate Crystal
Electric Modulus Scaling behaviors of the Near Stoichiometric Potassium Lithium Niobate Crystal
Byeong-Eog Jun, | 한국물리학회 | 2006 ,
387
Re-Crystallization and Characteristic As Properties of As-Implanted ZnO Activated by Ozone at Various Annealing Temperatures
Re-Crystallization and Characteristic As Properties of As-Implanted ZnO Activated by Ozone at Various Annealing Temperatures
T. S. Jeong, | 한국물리학회 | 2006 ,
388
Crystalline Phase and Photoluminescence Characteristics for Li-Doped Gd₂O₃:Eu³+ Thin-film Phosphors Grown on Various Substrates
Crystalline Phase and Photoluminescence Characteristics for Li-Doped Gd₂O₃:Eu³+ Thin-film Phosphors Grown on Various Substrates
Jong Seong Bae, | 한국물리학회 | 2006 ,
389
Structural and Corrosive Properties of ZrO₂Thin films on Zircaloy-4 by RF Reactive Magnetron Sputtering
Structural and Corrosive Properties of ZrO₂Thin films on Zircaloy-4 by RF Reactive Magnetron Sputtering
Soo Ho Kim, | 한국물리학회 | 2006 ,
390
Surface Investigation of a Cubic AIN Buffer Layer and GaN Grown on Si (111) and (100) as Revealed by Atomic force Microscopy
Surface Investigation of a Cubic AIN Buffer Layer and GaN Grown on Si (111) and (100) as Revealed by Atomic force Microscopy
M. K. Bae, | 한국물리학회 | 2006 ,
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