본문

  1. Home
308 Results:SS:M PP:대한전자공학회 0.171 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
21
Analytical Thermal Noise Model of Deep-Submicron MOSFETs
Analytical Thermal Noise Model of Deep-Submicron MOSFETs
Hyungcheol Shin., | 대한전자공학회 | 2006 ,
22
Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications
Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications
Ritesh Gupta., | 대한전자공학회 | 2006 ,
23
A Fast and Robust Approach for Modeling of Nanoscale Compound Semiconductors for High Speed Digital Applications
A Fast and Robust Approach for Modeling of Nanoscale Compound Semiconductors for High Speed Digital Applications
Anil Ahlawat., | 대한전자공학회 | 2006 ,
24
Vertical Integration of MM-wave MMIC's and MEMS Antennas
Vertical Integration of MM-wave MMIC's and MEMS Antennas
Youngwoo Kwon., | 대한전자공학회 | 2006 ,
25
InGaAs Nano-HEMT Devices for Milimeter-wave MMICs
InGaAs Nano-HEMT Devices for Milimeter-wave MMICs
Sung-Won Kim., | 대한전자공학회 | 2006 ,
26
Manufacturing of GaAs MMICs for Wireless Communications Applications
Manufacturing of GaAs MMICs for Wireless Communications Applications
Wu-Jing Ho., | 대한전자공학회 | 2006 ,
27
Molecular Beam Epitaxy of InAs/AlSb HFET's onSi and GaAs substrates
Molecular Beam Epitaxy of InAs/AlSb HFET's onSi and GaAs substrates
Jae-Eung Oh., | 대한전자공학회 | 2006 ,
28
Structure-related Characteristics of SiGe HBT and 2.4Ghz Down-conversion Mixer
Structure-related Characteristics of SiGe HBT and 2.4Ghz Down-conversion Mixer
Sang-Heung Lee., | 대한전자공학회 | 2006 ,
29
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
Sang Sik Choi., | 대한전자공학회 | 2006 ,
30
Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Fomation by Ion-cut Process
Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Fomation by Ion-cut Process
Hyung-Joo Woo., | 대한전자공학회 | 2006 ,
처음이전12345678910이후마지막