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414 Results:AA:H SIN 0.624 sec.
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231
Machining of the KSTAR TF Coil Structure
Machining of the KSTAR TF Coil Structure
K. H. Hong, | 한국물리학회 | 2006 ,
232
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Bonghyun Park, | 한국물리학회 | 2007 ,
233
A New Pixel Design of Active-Matrix Organic Light-Emitting diode Display Using Amorphous-Silicon Backplane
A New Pixel Design of Active-Matrix Organic Light-Emitting diode Display Using Amorphous-Silicon Backplane
Jae Won Choi, | 한국물리학회 | 2007 ,
234
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim, | 한국물리학회 | 2007 ,
235
Doping Effects of Lead on CdZnTe Crystals
Doping Effects of Lead on CdZnTe Crystals
Jong Hee Suh, | 한국물리학회 | 2007 ,
236
Influence of Sintering Temperature on Conduction Behaviors for CoO-and ZnO-Doped SnO₂ Varistor Ceramics
Influence of Sintering Temperature on Conduction Behaviors for CoO-and ZnO-Doped SnO₂ Varistor Ceramics
Hai Joon Lee, | 한국물리학회 | 2006 ,
237
Floquet States in a Single Quantum Dot Driven by Thz Fields
Floquet States in a Single Quantum Dot Driven by Thz Fields
Koo-Chul Je, | 한국물리학회 | 2006 ,
238
Development and Characterization of a Microcalorimeter Based on a Si-N Membrane for Measuring a Small Specific Heat with Submicro-Joule Precision
Development and Characterization of a Microcalorimeter Based on a Si-N Membrane for Measuring a Small Specific Heat with Submicro-Joule Precision
Ki Sung Suh, | 한국물리학회 | 2006 ,
239
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Y. W. Kim, | 한국물리학회 | 2006 ,
240
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
kwang Woong Kim, | 한국물리학회 | 2006 ,
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