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Physical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄ and SiH[N(CH₃)₂]₃ Precursors
Physical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄ and SiH[N(CH₃)₂]₃ Precursors
Chung, K. B., | 한국물리학회 | 2006 ,
처음이전12마지막