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Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Won Ju Cho, | 대한전자공학회 | 2006 ,
12
Virtual boundary element-equivalent collocation method for the plane magnetoelectroelastic solids
Virtual boundary element-equivalent collocation method for the plane magnetoelectroelastic solids
Wei-An Yao, Xiao-Chuan Li, Gui-Rong Yu (P. R. Chi, | 국제구조공학회(TECNO-PRESS) | 2006 ,
처음이전12마지막
1
Egyptian Journal of Solids
Egyptian Society of Solid State Science & Applications [, ]
2
Izvestiya, Physics of the Solid Earth
한국지진연구소 [지학, ]
3
Latin American Journal of Solids & Structures
Latin American Journal of Solids & Structures [, ]
4
Physics of the Solid State
MAIK Nauka Interperiodica [, ]
5
Radiation Effects & Defects in Solids
Taylor & Francis Ltd [, ]
6
Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena
Taylor & Francis Ltd [, ]
7
Solid State Technology
Penn Well Publishing Co. [, ]