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290 Results:AA:W OH 0.218 sec.
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181
Calculation of the Tunneling Current and the Noise for a Radio-Frequency Single Electron Transistor Based on a Green's function Approach
Calculation of the Tunneling Current and the Noise for a Radio-Frequency Single Electron Transistor Based on a Green's function Approach
J. H. Oh, | 한국물리학회 | 2007 ,
182
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Do-Hyun Oh, | 한국물리학회 | 2007 ,
183
Local Observation of Ferroeletric Bi(3.25)La(0.75)Tio(12) Thin Films by Atomic Force Microscopy
Local Observation of Ferroeletric Bi(3.25)La(0.75)Tio(12) Thin Films by Atomic Force Microscopy
T. Y. Kim, | 한국물리학회 | 2007 ,
184
Study on the Discharge Characteristics of a Prototype Ion Source for the KSTAR Neutral Beam system Depending on Filament Configurations
Study on the Discharge Characteristics of a Prototype Ion Source for the KSTAR Neutral Beam system Depending on Filament Configurations
B. H. Oh, | 한국물리학회 | 2006 ,
185
High-Power Pulse Transformer for a 1. 5-MW Magnetron of KSTAR LHCD Microwave Application
High-Power Pulse Transformer for a 1. 5-MW Magnetron of KSTAR LHCD Microwave Application
Sung-Duck Jang, | 한국물리학회 | 2006 ,
186
Joint Development for KSTAR CS Coil
Joint Development for KSTAR CS Coil
K. Park, | 한국물리학회 | 2006 ,
187
Electrical Insulation of KSTAR Magnet Lead
Electrical Insulation of KSTAR Magnet Lead
W. Chung, | 한국물리학회 | 2006 ,
188
Spectroscopic Measurenent of Dα, CII, CIII and CD Emissions in Heliotron J Carbon Test Limiter Experiment
Spectroscopic Measurenent of Dα, CII, CIII and CD Emissions in Heliotron J Carbon Test Limiter Experiment
H. Arimoto, | 한국물리학회 | 2006 ,
189
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
J. H. Lee, | 한국물리학회 | 2007 ,
190
Breakdown Voltage Characteristics of SiC Schottky Barrier Diode with Aluminum Depositon Edge Termination Structure
Breakdown Voltage Characteristics of SiC Schottky Barrier Diode with Aluminum Depositon Edge Termination Structure
Seong-Jin Kim, | 한국물리학회 | 2007 ,
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