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141
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Wonjoon Choi., | 한국물리학회 | 2006 ,
142
Simulator for the Design Considered Critical Dimension Bias in Resist Reflow Process
Simulator for the Design Considered Critical Dimension Bias in Resist Reflow Process
Sang-kon Kim., | 한국물리학회 | 2006 ,
143
Immobilization and Observation of Particles with 3-Aminopropyltrimethoxysilane Studied by Scanning Probe Microscopy
Immobilization and Observation of Particles with 3-Aminopropyltrimethoxysilane Studied by Scanning Probe Microscopy
Y. J. Oh., | 한국물리학회 | 2006 ,
144
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
N. I. Cho., | 한국물리학회 | 2006 ,
145
Piezoelectric Properties of Highly Oriented Lead-Free Na0.5K0.5NbO₃ Films as Determined Using Piezoelectric Force Microscopy
Piezoelectric Properties of Highly Oriented Lead-Free Na0.5K0.5NbO₃ Films as Determined Using Piezoelectric Force Microscopy
J.S. Kim., | 한국물리학회 | 2006 ,
146
Effects of the Crystallographic Orientation of the Al₂O₃substrate on the Structural and the Optical Properties of ZnO Thin Films
Effects of the Crystallographic Orientation of the Al₂O₃substrate on the Structural and the Optical Properties of ZnO Thin Films
Chongmu Lee., | 한국물리학회 | 2006 ,
147
Electrical Properties of the ZnO Nanowire Transistor and Its Analysis with Equivalent Circuit model
Electrical Properties of the ZnO Nanowire Transistor and Its Analysis with Equivalent Circuit model
C. Y. Yim., | 한국물리학회 | 2006 ,
148
Electrical Charging Property of Au Nano-Particles in a SiON Dielectric Layer
Electrical Charging Property of Au Nano-Particles in a SiON Dielectric Layer
Min Seung Lee., | 한국물리학회 | 2006 ,
149
Understanding the Behaviors of Cu During a Post-Gate-Oxidation Device Process by Using an Isotope Tracking Analysis
Understanding the Behaviors of Cu During a Post-Gate-Oxidation Device Process by Using an Isotope Tracking Analysis
Sung-wook Lee., | 한국물리학회 | 2006 ,
150
Optoelectrical Properties for CuAlSe₂ Epilayers Grown by Using a Hot Wall Epitaxy Method
Optoelectrical Properties for CuAlSe₂ Epilayers Grown by Using a Hot Wall Epitaxy Method
Seoungnam Baek., | 한국물리학회 | 2006 ,
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