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221 Results:AA:D C OH 0.234 sec.
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131
Breakdown Voltage Characteristics of SiC Schottky Barrier Diode with Aluminum Depositon Edge Termination Structure
Breakdown Voltage Characteristics of SiC Schottky Barrier Diode with Aluminum Depositon Edge Termination Structure
Seong-Jin Kim, | 한국물리학회 | 2007 ,
132
Entanglement Description of a Pure Multiqubit
Entanglement Description of a Pure Multiqubit
Hyuk-Jae Lee, | 한국물리학회 | 2006 ,
133
Time-Resolved Differential Reflection Measurements on Ga₁-xMnxAs
Time-Resolved Differential Reflection Measurements on Ga₁-xMnxAs
Shin Kim, | 한국물리학회 | 2006 ,
134
The Effect of Synthesis Conditions on the Formation of Titanate Nanotubes
The Effect of Synthesis Conditions on the Formation of Titanate Nanotubes
M. Qamar, | 한국물리학회 | 2006 ,
135
A Dual-concentric-Core Photonic Crystal Fiber for Broadband Dispersion Compensation
A Dual-concentric-Core Photonic Crystal Fiber for Broadband Dispersion Compensation
Soan Kim, | 한국물리학회 | 2006 ,
136
Improved Performance of Organic Light-Emitting Diodes Using a Zn Complex
Improved Performance of Organic Light-Emitting Diodes Using a Zn Complex
Yoon-Ki Jang, | 한국물리학회 | 2006 ,
137
Influence of High Temperature Annealing on the Magnetic and the Structural Properties of Co Ion-Implanted ZnO Single Crystals
Influence of High Temperature Annealing on the Magnetic and the Structural Properties of Co Ion-Implanted ZnO Single Crystals
Woochul Kim, | 한국물리학회 | 2006 ,
138
Anisotropic X-ray Rocking Curve Due to a Damaged Surface Layer in a Freestanding GaN Thick Film
Anisotropic X-ray Rocking Curve Due to a Damaged Surface Layer in a Freestanding GaN Thick Film
S. H. Park, | 한국물리학회 | 2006 ,
139
Structural Properties of CrN Buffers for GaN Growth
Structural Properties of CrN Buffers for GaN Growth
W. H. Lee, | 한국물리학회 | 2006 ,
140
Roles of Kinetics and Energetics in the Growth of AIN by Plasma-Assisted Molecular Beam Epitaxy
Roles of Kinetics and Energetics in the Growth of AIN by Plasma-Assisted Molecular Beam Epitaxy
I. H. Im, | 한국물리학회 | 2006 ,
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