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1
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
N. I. Cho., | 한국물리학회 | 2006 ,
2
Stability of Interface Voids in Copper Metallization for Integrated Circuit Applications
Stability of Interface Voids in Copper Metallization for Integrated Circuit Applications
J.H. Choy, | 대한금속.재료학회 | 2004 ,
3
Evolution of Interface Voids under Current and Temperature Stress in Integrate Circuit Metallization
Evolution of Interface Voids under Current and Temperature Stress in Integrate Circuit Metallization
J.H. Choy, K.L. Kavanagh, Y.C. Kim, | 대한금속.재료학회 | 2004 ,
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