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1
Self-Organized Process for Patterning of a Thin-Film Transistor
Self-Organized Process for Patterning of a Thin-Film Transistor
Byoung-kwon Choo., | 한국물리학회 | 2006 ,
2
Electrical Properties of the ZnO Nanowire Transistor and Its Analysis with Equivalent Circuit model
Electrical Properties of the ZnO Nanowire Transistor and Its Analysis with Equivalent Circuit model
C. Y. Yim., | 한국물리학회 | 2006 ,
3
Effect of Plasma Treatment on the Performance of a Thin-Film Transistor Made of Poly-Si by Using Ni-Mediated Crystallization
Effect of Plasma Treatment on the Performance of a Thin-Film Transistor Made of Poly-Si by Using Ni-Mediated Crystallization
Sang Kyu Kim., | 한국물리학회 | 2006 ,
4
Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs Metamorphic High-Electron-Mobility Transistors
Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs Metamorphic High-Electron-Mobility Transistors
Lee, Ching-sung, | 한국물리학회 | 2006 ,
5
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Navamathavan, R., | 한국물리학회 | 2006 ,
6
Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications
Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications
Ritesh Gupta., | 대한전자공학회 | 2006 ,
7
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
Sang Sik Choi., | 대한전자공학회 | 2006 ,
8
Nanoscale Floating-Gate Characteristics of Colloidal Au Nanoparticles Electrostatically Assembled on Si Nanowire Split-Gate Transistors
Nanoscale Floating-Gate Characteristics of Colloidal Au Nanoparticles Electrostatically Assembled on Si Nanowire Split-Gate Transistors
Hyeong-Seok Jeon., | 대한전자공학회 | 2006 ,
9
An analysis of the 2DEG(Dimensional Electron Gas)-emitter Heterojunction bipolar transistor
An analysis of the 2DEG(Dimensional Electron Gas)-emitter Heterojunction bipolar transistor
Lee Chona-Ha, 569.6-L477a-TD | Columbia University | 1996 569.6-L477a-TD,
10
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae, | 대한전자공학회 | 2004 ,
처음12이후마지막