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1
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Bong-Kyu Joung, | 한국전기전자재료학회 | 2007 ,
2
Net Shape Formation of Sub-Micron Aluniba with Reduced Flaws by High-Speed Centrifugal Comoaction Process
Net Shape Formation of Sub-Micron Aluniba with Reduced Flaws by High-Speed Centrifugal Comoaction Process
Hiriyuki Y. Suzuki, Hidenori Kuroki, | 대한금속.재료학회 | 2004 ,
3
The Physics of Submicron Structures
The Physics of Submicron Structures
Grubin, H L, 429.12-G885p | Plenum | 1984 429.12-G885p,
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