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1
Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition
Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition
Kannan Meera., | 한국물리학회 | 2006 ,
2
Post-Annealing Effect on SiOC(-H) Composite Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition
Post-Annealing Effect on SiOC(-H) Composite Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition
Kyoung Suk Oh., | 한국물리학회 | 2006 ,
3
Studies of Low-Dielectric-Constant SiOC(-H) Thin Films Deposited by Using MTES/O₂-PECVD
Studies of Low-Dielectric-Constant SiOC(-H) Thin Films Deposited by Using MTES/O₂-PECVD
Rangaswamy Navamathavan., | 한국물리학회 | 2006 ,
4
Oxidation Features of SiOC/MoSi₂Composite at Low Temperatures
Oxidation Features of SiOC/MoSi₂Composite at Low Temperatures
Dong-Bok Lee, | 대한금속.재료학회 | 2004 ,
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