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1
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Choi, Hoon, | 한국물리학회 | 2006 ,
2
Structure-related Characteristics of SiGe HBT and 2.4Ghz Down-conversion Mixer
Structure-related Characteristics of SiGe HBT and 2.4Ghz Down-conversion Mixer
Sang-Heung Lee., | 대한전자공학회 | 2006 ,
3
Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System
Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System
Wentao Huang, Changchun Chen, Xiyou Li, | 대한금속.재료학회 | 2004 ,
4
High Quality Partially Relaxed SiGe Film Grown on Silicon-on-Insulator Substrate by Ultra-High Vacuum Chemical Vapor Deposition
High Quality Partially Relaxed SiGe Film Grown on Silicon-on-Insulator Substrate by Ultra-High Vacuum Chemical Vapor Deposition
Changchun Chen, Wentao Huang, Zhihiog Liu, | 대한금속.재료학회 | 2004 ,
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