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1
Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method
Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method
Jungyup Yang., | 한국물리학회 | 2006 ,
2
Magnetocapacitance in Metal-Oxide-Metal Junction System
Magnetocapacitance in Metal-Oxide-Metal Junction System
Kim, Kyoo, | 한국물리학회 | 2006 ,
3
Atomic Layer Deposition of Ultrathin Metal-Oxide Films for Nano-Scale Device Applications
Atomic Layer Deposition of Ultrathin Metal-Oxide Films for Nano-Scale Device Applications
Kim, Hyongsub, | 한국물리학회 | 2006 ,
4
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
Sang Sik Choi., | 대한전자공학회 | 2006 ,
5
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae, | 대한전자공학회 | 2004 ,
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