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1
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
Kazunori Ichikawa., | 한국물리학회 | 2006 ,
2
Rotational Gating Mechanisms of an Ion Channel with a Negative Hydrophobic Mismatch
Rotational Gating Mechanisms of an Ion Channel with a Negative Hydrophobic Mismatch
Kong-ju-bock Lee., | 한국물리학회 | 2006 ,
3
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Wonjoon Choi., | 한국물리학회 | 2006 ,
4
Low Voltage Program/ Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer
Low Voltage Program/ Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer
Jeong-Dong Choe., | 대한전자공학회 | 2006 ,
5
Information Gathering, Transaction Costs, and the Property Rights Approach
Information Gathering, Transaction Costs, and the Property Rights Approach
Patrick W. Schmitz., | American Economic Assn | 2006 ,
6
National Treatment in the GATT
National Treatment in the GATT
Henrik Horn., | American Economic Assn | 2006 ,
7
Researchers at the Gate : Factors Influencing Districts' Right of Entry Decisions
Researchers at the Gate : Factors Influencing Districts' Right of Entry Decisions
Steven A. Melnick., | Corwin Press Inc. | 2006 ,
8
A-High Density 64k-Bit One-Time Programmable ROM Array with 3-Transistor Cell Standard CMOS Gate-Oxide Antifuse
A-High Density 64k-Bit One-Time Programmable ROM Array with 3-Transistor Cell Standard CMOS Gate-Oxide Antifuse
Hyouk-Kyu Cha, Jinbong Kim, Kwyro Lee, | 대한전자공학회 | 2004 ,
9
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Bong-Kyu Joung, | 한국전기전자재료학회 | 2007 ,
10
Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Won Ju Cho, | 대한전자공학회 | 2006 ,
처음12이후마지막
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Abrogation of the Platt Amendment, 1934
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Cancer Investigation
Marcel Dekker Inc. [, ]
3
Clinical & Investigative Medicine
Canadian Medical Association [, ]
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Clinical Drug Investigation
ADI BV [, ]
5
Desegregation Directive
Great Neck Publishing [, ]
6
Desegregation of the Armed Forces
Great Neck Publishing [, ]
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European Journal of Clinical Investigation
Blackwell Publishing Limited [, ]
8
Gateways: International Journal of Community Research & Engagement
University of Technology, Sydney [, ]
9
IEE Proceedings -- Microwaves, Antennas & Propagation
IEE [, ]
10
IEE Proceedings -- Radar, Sonar & Navigation
IEE [, ]
11
IET Microwaves, Antennas & Propagation
Institution of Engineering & Technology [, ]
12
IET Radar, Sonar & Navigation
Institution of Engineering & Technology [, ]
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Immunological Investigations
Marcel Dekker Inc. [, ]
14
International Congregational Journal
Sheffield Academic Press [, ]
15
In the House of Delegates
Great Neck Publishing [, ]
16
Investigating: Australian Primary & Junior Science Journal
Australian Science Teachers Association [, ]
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Irrigation & Drainage Systems
Kluwer Academic Publishing / Academic [, ]
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Irrigation Science
Springer-Verlag Germany [, ]
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Journal of Investigative Dermatology
Blackwell Publishing Limited [, ]
20
Journal of Investigative Dermatology Symposium Proceedings
Blackwell Publishing Limited [, ]