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1
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
Sang Sik Choi., | 대한전자공학회 | 2006 ,
2
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae, | 대한전자공학회 | 2004 ,
3
Giga-Hertz-Level Electromagnetic Field Analysis for Equivalent Inductance Modeling of High-Performance SoC and SiP Designs
Giga-Hertz-Level Electromagnetic Field Analysis for Equivalent Inductance Modeling of High-Performance SoC and SiP Designs
Jason, J. Yao, Keh-Jeng Chang, Wei-Che Chuang, an, | 대한전자공학회 | 2005 ,
4
Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance
Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance
Sung Min Kim, Eun Jung Yoon, Min Sang Kim, Ming L, | 대한전자공학회 | 2006 ,
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