본문

  1. Home
20 Results:AA:SANG SIG KIM 0.140 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
1
Temperature - Dependent Photoluminescence from Er-implanted undoped and Mg-doped GaN
Temperature - Dependent Photoluminescence from Er-implanted undoped and Mg-doped GaN
Sang Sig Kim, | 한국전기전자재료학회 | 2001 ,
2
Site-selectifve Photoluminescence Spectroscopy of Er-implanted Wurtzite GaN under Various Annealing Condition
Site-selectifve Photoluminescence Spectroscopy of Er-implanted Wurtzite GaN under Various Annealing Condition
Sang Sig Kim, | 한국전기전자재료학회 | 2001 ,
3
Effect of the Coating on the Structure and Optical Properties of GaN Nanowires
Effect of the Coating on the Structure and Optical Properties of GaN Nanowires
Jong Soo Lee, | 한국전기전자재료학회 | 2005 ,
4
Structural and Optoelectronic Properties of SnO2 Nanowires
Structural and Optoelectronic Properties of SnO2 Nanowires
Jong Soo Lee, | 한국전기전자재료학회 | 2005 ,
5
Synthesization of ZnO nanomaterials
Synthesization of ZnO nanomaterials
Jong Soo Lee, | 한국전기전자재료학회 | 2004 ,
6
Al2O3 Coating and Filling of Carbon Nanotubes
Al2O3 Coating and Filling of Carbon Nanotubes
Jong Soo Lee, | 한국전기전자재료학회 | 2004 ,
7
Al2O3 Coating and Filling of Carbon Nanotubes
Al2O3 Coating and Filling of Carbon Nanotubes
Jong Soo Lee, | 한국전기전자재료학회 | 2004 ,
8
Al2O3 Nano-Coating by Atomic Layer Deposition
Al2O3 Nano-Coating by Atomic Layer Deposition
Byung Don Min, | 한국전기전자재료학회 | 2004 ,
9
Regular Paper : Simulation of a Novel Lateral Trench Electrode IGBT with Improved Latch - up and Forward Blocking Characteristics
Regular Paper : Simulation of a Novel Lateral Trench Electrode IGBT with Improved Latch - up and Forward Blocking Characteristics
Ey Goo Kang, | 한국전기전자재료학회 | 2002 ,
10
Improvement of Hybrid EL Efficiency in Nanoparticle EL Devices by Insertion of the Layers of PVK and BaF2
Improvement of Hybrid EL Efficiency in Nanoparticle EL Devices by Insertion of the Layers of PVK and BaF2
Jun Woo Lee, | 한국전기전자재료학회 | 2005 ,
처음12이후마지막