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1
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
Kazunori Ichikawa., | 한국물리학회 | 2006 ,
2
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Wonjoon Choi., | 한국물리학회 | 2006 ,
3
Low Voltage Program/ Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer
Low Voltage Program/ Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer
Jeong-Dong Choe., | 대한전자공학회 | 2006 ,
4
Researchers at the Gate : Factors Influencing Districts' Right of Entry Decisions
Researchers at the Gate : Factors Influencing Districts' Right of Entry Decisions
Steven A. Melnick., | Corwin Press Inc. | 2006 ,
5
Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Won Ju Cho, | 대한전자공학회 | 2006 ,
6
Robust Stability Analysis of an Uncertain Nonlinear Networked Control System Gategory
Robust Stability Analysis of an Uncertain Nonlinear Networked Control System Gategory
Minrui Fei, Jun Yi, Huosheng Hu, | The Korean Institute of Electrical Eng. | 2006 ,
처음1마지막
1
Gateways: International Journal of Community Research & Engagement
University of Technology, Sydney [, ]
2
In the House of Delegates
Great Neck Publishing [, ]