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1
Characteristics of p-Type GaN Formed by Two Different Types of Mg Diffusion
Characteristics of p-Type GaN Formed by Two Different Types of Mg Diffusion
S. J. Chung., | 한국물리학회 | 2006 ,
2
First-Pinciples Investigation of Indium Diffusion in a Silicon Substrate
First-Pinciples Investigation of Indium Diffusion in a Silicon Substrate
Yoon, Kwan-sun, | 한국물리학회 | 2006 ,
3
Numerical Studies on the Apporximation of Horizontal Diffusion using Sigma Coordinate System
Numerical Studies on the Apporximation of Horizontal Diffusion using Sigma Coordinate System
Jong Wook Lee., | 대한토목학회 | 2006 ,
4
Diffusion-Controlled Reactions Involving a Reactant with Two Reaction Sites : Evaluation of the Utility of Wilemski-Fixman Closure Approximation
Diffusion-Controlled Reactions Involving a Reactant with Two Reaction Sites : Evaluation of the Utility of Wilemski-Fixman Closure Approximation
Uhm Jesik, | 대한화학회 | 2006 ,
5
Pre-Annealing Effect of Electroless Ni-B Deposit as a Diffusion Barrier for Electroplated Cu Electrodes
Pre-Annealing Effect of Electroless Ni-B Deposit as a Diffusion Barrier for Electroplated Cu Electrodes
Jae Woong Choi, Gil Ho Hwang, Won Kyu Han, Sung G, | Korean Institute of Metals and Materials | 2006 ,
6
Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Fabrication of p-type FinFETs with a 20nm Gate Length using Boron Solid Phase Diffusion Process
Won Ju Cho, | 대한전자공학회 | 2006 ,
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