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961
Temperature Dependence of Metal-Insulator Transition in Mn-doped p-Type GaAs
Temperature Dependence of Metal-Insulator Transition in Mn-doped p-Type GaAs
Sungyoul Choi, | 한국물리학회 | 2007 ,
962
Strain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors
Strain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors
T. Kim, | 한국물리학회 | 2007 ,
963
Magneto-Optical Properties of Non-Magnetic Semiconductor Quantum dot and Magnetic Quantum well Coupled Structures
Magneto-Optical Properties of Non-Magnetic Semiconductor Quantum dot and Magnetic Quantum well Coupled Structures
Sanghoon Lee, | 한국물리학회 | 2007 ,
964
Structrual, Optical, and Magnetic Characteristics of an InMnP:Zn Epilayer
Structrual, Optical, and Magnetic Characteristics of an InMnP:Zn Epilayer
Yoon Shon, | 한국물리학회 | 2007 ,
965
Dielectric Functions of CdSe and ZnSe Obtained by Using Vacuum Ultra-Violet Spectroscopic Ellipsometry
Dielectric Functions of CdSe and ZnSe Obtained by Using Vacuum Ultra-Violet Spectroscopic Ellipsometry
T. J. Kim, | 한국물리학회 | 2007 ,
966
Electronic Properties of Self-Assembled CdTe Quantum Wires Grown on ZnTE Buffer Layers
Electronic Properties of Self-Assembled CdTe Quantum Wires Grown on ZnTE Buffer Layers
S. H. Song, | 한국물리학회 | 2007 ,
967
Effect of NH₃Pretreatment on the Surface Morphologies of GaN Films Grown on Miscut Sapphire Substrates by Using Hydride Vapor Phase Epitaxy
Effect of NH₃Pretreatment on the Surface Morphologies of GaN Films Grown on Miscut Sapphire Substrates by Using Hydride Vapor Phase Epitaxy
Sanghwa Lee, | 한국물리학회 | 2007 ,
968
The Optical Characteristics of Epitaxial Lateral and Vertical Overgrowth of GaN on Stripe-Patterned Si Substrate
The Optical Characteristics of Epitaxial Lateral and Vertical Overgrowth of GaN on Stripe-Patterned Si Substrate
H. Y. Yeo, | 한국물리학회 | 2007 ,
969
High Potential Barrier Effects on Self-Assembled InAs Quantum Dots
High Potential Barrier Effects on Self-Assembled InAs Quantum Dots
S. I. Jung, | 한국물리학회 | 2007 ,
970
Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy
Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy
S. I. Jung, | 한국물리학회 | 2007 ,
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