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951
Study on Reducing the Energy Barrier Between an Electrode and an Organic Semiconductor by Using Inorganic Semiconductor Layer in Organic Thin Film Transistors
Study on Reducing the Energy Barrier Between an Electrode and an Organic Semiconductor by Using Inorganic Semiconductor Layer in Organic Thin Film Transistors
Seung Hyun Jee, | 한국물리학회 | 2007 ,
952
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Byoungchul Park, | 한국물리학회 | 2007 ,
953
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon, | 한국물리학회 | 2007 ,
954
Transport Spectroscopy of a Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET
Transport Spectroscopy of a Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET
Y. S. Yu, | 한국물리학회 | 2007 ,
955
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Dong Ho Kim, | 한국물리학회 | 2007 ,
956
835-nm GaAs/AlGaAs High-Power Laser Diode for Up-Conversion Fiber Lasers
835-nm GaAs/AlGaAs High-Power Laser Diode for Up-Conversion Fiber Lasers
Byungjin Ma, | 한국물리학회 | 2007 ,
957
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
Jong-Min Lee, | 한국물리학회 | 2007 ,
958
Optiminzation of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses
Optiminzation of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses
Young Chul Shin, | 한국물리학회 | 2007 ,
959
A Flip-chip-Packaged InP HBT Transimpedance Amplifier for 40-Gb/s Optical Link Applications
A Flip-chip-Packaged InP HBT Transimpedance Amplifier for 40-Gb/s Optical Link Applications
Chul-Won JU, | 한국물리학회 | 2007 ,
960
Temperature Dependence of Metal-Insulator Transition in Mn-doped p-Type GaAs
Temperature Dependence of Metal-Insulator Transition in Mn-doped p-Type GaAs
Sungyoul Choi, | 한국물리학회 | 2007 ,
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