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1000 Results:AA:PARK C 3.452 sec.
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901
Electrical and Reliability Characteristics of HfO₂ MOS Capacitor with Mo Metal Gate Electrode
Electrical and Reliability Characteristics of HfO₂ MOS Capacitor with Mo Metal Gate Electrode
In-Sung Park, | 한국물리학회 | 2007 ,
902
Crystallization Process and Mixed Alkali Effect in Lithium-Potassium Borate Glass
Crystallization Process and Mixed Alkali Effect in Lithium-Potassium Borate Glass
M. Kim, | 한국물리학회 | 2007 ,
903
First-Principles Study of Defects in CaB6
First-Principles Study of Defects in CaB6
I. J. Kang, | 한국물리학회 | 2007 ,
904
First-Principles Study of the Electronic Structures and Magnetic Properties of Diluted Magnetic Semiconductors CdSe : (Mn, Fe, Co)
First-Principles Study of the Electronic Structures and Magnetic Properties of Diluted Magnetic Semiconductors CdSe : (Mn, Fe, Co)
Yun Hee Chang, | 한국물리학회 | 2007 ,
905
Microscopic Origin of Lattice Instability in Ferroelectric PbTiO₃
Microscopic Origin of Lattice Instability in Ferroelectric PbTiO₃
Minseok Choi, | 한국물리학회 | 2007 ,
906
First-Principles Study of Carrier-Spin Exchange Interaction in(Ⅲ, Mn)Ⅴ and (Ⅱ, Mn)Ⅵ Diluted Magnetic Semiconductors
First-Principles Study of Carrier-Spin Exchange Interaction in(Ⅲ, Mn)Ⅴ and (Ⅱ, Mn)Ⅵ Diluted Magnetic Semiconductors
Hyunsoo Kim, | 한국물리학회 | 2007 ,
907
Microscopic Properties of Interstitial Hydrogen Impurity in TiO₂
Microscopic Properties of Interstitial Hydrogen Impurity in TiO₂
D. J. Park, | 한국물리학회 | 2007 ,
908
Critical Lateral Size for Ferroelectricity in Ultrathin Film of PbTiO₃
Critical Lateral Size for Ferroelectricity in Ultrathin Film of PbTiO₃
H. H. Nahm, | 한국물리학회 | 2007 ,
909
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Chul Ho Song, | 한국물리학회 | 2007 ,
910
Electrical Properties of CeO₂ Thin Films Grown on p-Si(100) Substrates by the Pulsed Laser Deposition Method
Electrical Properties of CeO₂ Thin Films Grown on p-Si(100) Substrates by the Pulsed Laser Deposition Method
Sungmin Park, | 한국물리학회 | 2007 ,
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