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811
Recent Progress In Large Helical Device Experiments
Recent Progress In Large Helical Device Experiments
A. Komori, | 한국물리학회 | 2006 ,
812
Two-Color InAs/InGaAs Quantum-Dot Infrared Photodetectors for Mid-and Long-Wavelength Infrared Detection
Two-Color InAs/InGaAs Quantum-Dot Infrared Photodetectors for Mid-and Long-Wavelength Infrared Detection
Eui-Tae Kim, | 한국물리학회 | 2007 ,
813
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
J. H. Lee, | 한국물리학회 | 2007 ,
814
A New Pixel Design of Active-Matrix Organic Light-Emitting diode Display Using Amorphous-Silicon Backplane
A New Pixel Design of Active-Matrix Organic Light-Emitting diode Display Using Amorphous-Silicon Backplane
Jae Won Choi, | 한국물리학회 | 2007 ,
815
Fabrication of Reliable Self-Aligned InP/InGaAs/InP double Heterojunction Bipolar Transistor with Hexagonal Emitter mesa Structure
Fabrication of Reliable Self-Aligned InP/InGaAs/InP double Heterojunction Bipolar Transistor with Hexagonal Emitter mesa Structure
Byoung-Gue Min, | 한국물리학회 | 2007 ,
816
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim, | 한국물리학회 | 2007 ,
817
Crystallization Process and Mixed Alkali Effect in Lithium-Potassium Borate Glass
Crystallization Process and Mixed Alkali Effect in Lithium-Potassium Borate Glass
M. Kim, | 한국물리학회 | 2007 ,
818
Microscopic Origin of Lattice Instability in Ferroelectric PbTiO₃
Microscopic Origin of Lattice Instability in Ferroelectric PbTiO₃
Minseok Choi, | 한국물리학회 | 2007 ,
819
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Chul Ho Song, | 한국물리학회 | 2007 ,
820
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Tae Su Oh, | 한국물리학회 | 2007 ,
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