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711
Quenching of Ofloxacin and Flumequine Fluorescence by Divalent Transition Metal Cations
Quenching of Ofloxacin and Flumequine Fluorescence by Divalent Transition Metal Cations
Hyoung-Ryun Park, | 대한화학회 | 2006 ,
712
A Micromachined Two-state Bandpass Filter using Series Inductors and MEMS Switches for WLAN Applications
A Micromachined Two-state Bandpass Filter using Series Inductors and MEMS Switches for WLAN Applications
Jong-Man Kim, | 대한전자공학회 | 2004 ,
713
Fabrication of Electrochemical Sensor with Tunable Electrode Distance
Fabrication of Electrochemical Sensor with Tunable Electrode Distance
Yuheon Yi, | 대한전자공학회 | 2005 ,
714
Theoretical Calculation and Experimental Verification of the Hf/A1 Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition
Theoretical Calculation and Experimental Verification of the Hf/A1 Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition
Deok-Sin Kil, | 대한전자공학회 | 2005 ,
715
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Ki-Yeol Park, | 대한전자공학회 | 2005 ,
716
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
Dan An, Mun-Kyo Lee, Sang-Jin Lee, Du-Hyun Ko, Ji, | 대한전자공학회 | 2005 ,
717
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
718
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
719
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Wanjun Park, | 대한전자공학회 | 2002 ,
720
MRAM Technology for High Density Memory Application
MRAM Technology for High Density Memory Application
Chang-Shuk Kim, | 대한전자공학회 | 2002 ,
처음이전67686970717273747576이후마지막
1
Hyde Park Declaration
Great Neck Publishing [, ]