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531
Growth and Magnetic Properties of Ge₁-xMnx Single Crystals
Growth and Magnetic Properties of Ge₁-xMnx Single Crystals
SungKyu Kim, | 한국물리학회 | 2007 ,
532
Measurement of the Beam Power Transmission in the KSTAR Neutral Beam Test-Stand System
Measurement of the Beam Power Transmission in the KSTAR Neutral Beam Test-Stand System
Doo-Hee Chang, | 한국물리학회 | 2007 ,
533
Effect of Dispersion Cancellation on the Spectrum of Photons Generated From Type-II Parametric Down Conversion
Effect of Dispersion Cancellation on the Spectrum of Photons Generated From Type-II Parametric Down Conversion
Yoonshik Kang, | 한국물리학회 | 2007 ,
534
Characteristics of ZrCo Alloy for the Storage of Hydrogen Isotopes
Characteristics of ZrCo Alloy for the Storage of Hydrogen Isotopes
Myung-Hwa Shim, | 한국물리학회 | 2006 ,
535
Electron-Impact Collisions in Magnetized Plasmas
Electron-Impact Collisions in Magnetized Plasmas
Hong-Min Kim, | 한국물리학회 | 2006 ,
536
Study on the Discharge Characteristics of a Prototype Ion Source for the KSTAR Neutral Beam system Depending on Filament Configurations
Study on the Discharge Characteristics of a Prototype Ion Source for the KSTAR Neutral Beam system Depending on Filament Configurations
B. H. Oh, | 한국물리학회 | 2006 ,
537
Bixpectral Analysis of the ion Saturation Currents Measured at the Boundary of the Hanbit Mirror Plasma
Bixpectral Analysis of the ion Saturation Currents Measured at the Boundary of the Hanbit Mirror Plasma
Chang-Mo Ryu, | 한국물리학회 | 2006 ,
538
Electrical Properties of BiFeO₃-Doped PZT Thin Films for Embedded FeRAM Devices
Electrical Properties of BiFeO₃-Doped PZT Thin Films for Embedded FeRAM Devices
Chang Young Koo, | 한국물리학회 | 2007 ,
539
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Bonghyun Park, | 한국물리학회 | 2007 ,
540
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim, | 한국물리학회 | 2007 ,
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