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41
Temperature Changes Caused by 13-MeV Proton Irradiation at the Interface of a Pyrex Glass and a Silicon Wafer
Temperature Changes Caused by 13-MeV Proton Irradiation at the Interface of a Pyrex Glass and a Silicon Wafer
E. H. KIM, | 한국물리학회 | 2006 ,
42
Radiation Hardness Study for Silicon Strip Sensors Using the 35-MeV Proton Beam from the MC-50 Cyclotron at the Korea Institute of Radiological and Medical Sciences
Radiation Hardness Study for Silicon Strip Sensors Using the 35-MeV Proton Beam from the MC-50 Cyclotron at the Korea Institute of Radiological and Medical Sciences
Jik Lee, | 한국물리학회 | 2006 ,
43
Analysis of Pickup Signals in the Time Domain and the Frequency Domain for the Beam Position Monitor at the Pohang Light Source
Analysis of Pickup Signals in the Time Domain and the Frequency Domain for the Beam Position Monitor at the Pohang Light Source
J.Y. Huang, | 한국물리학회 | 2006 ,
44
Calculation of the Crossing Time Through the Fitness Barrier in the Mutation-Selection Model by Using a Computer Simulation
Calculation of the Crossing Time Through the Fitness Barrier in the Mutation-Selection Model by Using a Computer Simulation
Wonpyong Gill., | 한국물리학회 | 2006 ,
45
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
Kazunori Ichikawa., | 한국물리학회 | 2006 ,
46
Structural Fluctuation Signals in the Conduction of DNA Molecules
Structural Fluctuation Signals in the Conduction of DNA Molecules
Juyeon Yi., | 한국물리학회 | 2006 ,
47
Secondary Signal Amplification in Liquid-Phase Xenon for the Two-Phase Xenon WIMP Detector Using the Electroluminescence Method
Secondary Signal Amplification in Liquid-Phase Xenon for the Two-Phase Xenon WIMP Detector Using the Electroluminescence Method
Jong-kwan Woo., | 한국물리학회 | 2006 ,
48
A 10-Gb/s Planar InGaAs/InP Avalanche Photodiode with a Thin Multiplication Layer Fabricated by Using Recess-Etching and Single-Diffusion Processes
A 10-Gb/s Planar InGaAs/InP Avalanche Photodiode with a Thin Multiplication Layer Fabricated by Using Recess-Etching and Single-Diffusion Processes
Sungmin Hwang., | 한국물리학회 | 2006 ,
49
Color Centers and Charge Transfer Luminescence in a Yb3+-doped PbWO₄ Single Crystal
Color Centers and Charge Transfer Luminescence in a Yb3+-doped PbWO₄ Single Crystal
Yanlin Huang., | 한국물리학회 | 2006 ,
50
Influence of Modulation Doping on the Subband Structure of AlGaN/GaN Single Heterojunctions
Influence of Modulation Doping on the Subband Structure of AlGaN/GaN Single Heterojunctions
Kyu-seok Lee., | 한국물리학회 | 2006 ,
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98 International symposium
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AAACN Viewpoint
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Acta Physiologica Scandinavica
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Acta Scientiarum: Agronomy
Universidade Estadual de Maringa [, ]
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Institute of Ecology Vilnius University [, ]
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Active & Passive Electronic Components
Taylor & Francis Ltd [, ]
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Acts Passed by the General Assembly of Louisiana, 1865
Great Neck Publishing [, ]
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American Physical Therapy Association [, ]