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441
Formation Mechanism and Structural Characteristics of Low-Dielectric-Constant SiOC(-H) Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition with DMDMS and O₂ Precursors
Formation Mechanism and Structural Characteristics of Low-Dielectric-Constant SiOC(-H) Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition with DMDMS and O₂ Precursors
Chang Young Kim, | 한국물리학회 | 2007 ,
442
Study of SnO₂Nanorods Coated Using the PECVD Technique
Study of SnO₂Nanorods Coated Using the PECVD Technique
Hyoun Woo Kim, | 한국물리학회 | 2007 ,
443
Investigations of Bunch Filling Patterns to Suppress the Longitudinal Coupled-Bunch Instability at the Pohang Light Source
Investigations of Bunch Filling Patterns to Suppress the Longitudinal Coupled-Bunch Instability at the Pohang Light Source
Eun-San Kim, | 한국물리학회 | 2007 ,
444
Positive Equation-of-State Parameter in the Accelerating Dilaton Cosmology
Positive Equation-of-State Parameter in the Accelerating Dilaton Cosmology
Wontae Kim, | 한국물리학회 | 2007 ,
445
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Dong Ho Kim, | 한국물리학회 | 2007 ,
446
Magnetic Anisotropy and ac Susceptibility of(Ga, Mn)As
Magnetic Anisotropy and ac Susceptibility of(Ga, Mn)As
Y. S. Kim, | 한국물리학회 | 2007 ,
447
Strain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors
Strain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors
T. Kim, | 한국물리학회 | 2007 ,
448
Dielectric Functions of CdSe and ZnSe Obtained by Using Vacuum Ultra-Violet Spectroscopic Ellipsometry
Dielectric Functions of CdSe and ZnSe Obtained by Using Vacuum Ultra-Violet Spectroscopic Ellipsometry
T. J. Kim, | 한국물리학회 | 2007 ,
449
Growth of a GaN Epilayer on a Si (111) Substrate by Using an AIN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector
Growth of a GaN Epilayer on a Si (111) Substrate by Using an AIN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector
T. K. Kim, | 한국물리학회 | 2007 ,
450
Terahertz Electrical Characteristics of Heavily Doped N-GaAs Thin Films
Terahertz Electrical Characteristics of Heavily Doped N-GaAs Thin Films
Ui Whan Kim, | 한국물리학회 | 2007 ,
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