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291
Cooperative Learning in Small EFL Early Reading Groups
Cooperative Learning in Small EFL Early Reading Groups
Yu Ju Lan, | 범태평양응용언어학회 | 2005 ,
292
Aggregation-Induced Emission Enhancement of Polysilole Nanoaggregates
Aggregation-Induced Emission Enhancement of Polysilole Nanoaggregates
Seunghyun Jang, | 대한화학회 | 2006 ,
293
Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array
Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array
Sang-Ouk Ryu, | 대한전자공학회 | 2005 ,
294
Silicon Nitride Cantilever Arrays Integrated with Si Heater and Piezoelectric Sensors for SPM Data Storage Applications
Silicon Nitride Cantilever Arrays Integrated with Si Heater and Piezoelectric Sensors for SPM Data Storage Applications
Hyo-Jin Nam, | 대한전자공학회 | 2005 ,
295
Theoretical Calculation and Experimental Verification of the Hf/A1 Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition
Theoretical Calculation and Experimental Verification of the Hf/A1 Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition
Deok-Sin Kil, | 대한전자공학회 | 2005 ,
296
ViP: A Practical Approach to Platform-based System Modeling Methodology
ViP: A Practical Approach to Platform-based System Modeling Methodology
Junhyung Um, SungPack Hong, Young-Taek Kim, Eui-y, | 대한전자공학회 | 2005 ,
297
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Byoung-Gon Yu, | 대한전자공학회 | 2002 ,
298
MRAM Technology for High Density Memory Application
MRAM Technology for High Density Memory Application
Chang-Shuk Kim, | 대한전자공학회 | 2002 ,
299
Piezoelectric PZT Cantilever Array Integrated with Piezoresistor for High Speed Operation and Calibration of Atomic Force Microscopy
Piezoelectric PZT Cantilever Array Integrated with Piezoresistor for High Speed Operation and Calibration of Atomic Force Microscopy
Young-Sik Kim, | 대한전자공학회 | 2002 ,
300
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
Dae-Hyun Kim, | 대한전자공학회 | 2003 ,
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