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271
Femtosecond Pump-Probe MOKE Microscopy for an Ultrafast Spin Dynamics Study
Femtosecond Pump-Probe MOKE Microscopy for an Ultrafast Spin Dynamics Study
Kyeong-Dong Lee, | 한국물리학회 | 2006 ,
272
Investigations of the Structural, Thermal, and Magnetic Properties of Ca₃_xYxCo₂O6
Investigations of the Structural, Thermal, and Magnetic Properties of Ca₃_xYxCo₂O6
C. H. Kim, | 한국물리학회 | 2006 ,
273
Crystalline Phase and Photoluminescence Characteristics for Li-Doped Gd₂O₃:Eu³+ Thin-film Phosphors Grown on Various Substrates
Crystalline Phase and Photoluminescence Characteristics for Li-Doped Gd₂O₃:Eu³+ Thin-film Phosphors Grown on Various Substrates
Jong Seong Bae, | 한국물리학회 | 2006 ,
274
Time-Resolved Differential Reflection Measurements on Ga₁-xMnxAs
Time-Resolved Differential Reflection Measurements on Ga₁-xMnxAs
Shin Kim, | 한국물리학회 | 2006 ,
275
Beam-Optics Analysis and Periodicity Restoration in the Storage Ring of the Pohang Light Source
Beam-Optics Analysis and Periodicity Restoration in the Storage Ring of the Pohang Light Source
S. H. Shin, | 한국물리학회 | 2006 ,
276
Sub-Bandgap Photonic Base Current Method for Extracting the Trap Density at Heterointerfaces in Heterojunction Bipolar Transistors
Sub-Bandgap Photonic Base Current Method for Extracting the Trap Density at Heterointerfaces in Heterojunction Bipolar Transistors
S. W. Kim, | 한국물리학회 | 2006 ,
277
Design and Fabrication of the Double-Sided Silicon Microstrip Sensor
Design and Fabrication of the Double-Sided Silicon Microstrip Sensor
H. Park, | 한국물리학회 | 2006 ,
278
Electroreflectance and Photoluminescence Study on InGaN Alloys
Electroreflectance and Photoluminescence Study on InGaN Alloys
Jung-Won Yoon, | 한국물리학회 | 2006 ,
279
Determination of the Excition Recombination Zone in White OLEDs Based on a Blue Emitting Layer of 4'4-Bis(2,2'-Dipheny1 Viny1)-1,1'-Bipheny1
Determination of the Excition Recombination Zone in White OLEDs Based on a Blue Emitting Layer of 4'4-Bis(2,2'-Dipheny1 Viny1)-1,1'-Bipheny1
So-Young KIm, | 한국물리학회 | 2006 ,
280
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Nambin Kim, | 한국물리학회 | 2006 ,
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