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211
Characterization of the Evanescent Field in Objective-Based Total-Internal-Reflection Fluorescence (TIRF) Microscopy
Characterization of the Evanescent Field in Objective-Based Total-Internal-Reflection Fluorescence (TIRF) Microscopy
Ja Yil Lee, | 한국물리학회 | 2007 ,
212
Investigation of Solid-State Photomultipliers for Positron Emission Tomography Scanners
Investigation of Solid-State Photomultipliers for Positron Emission Tomography Scanners
Jae Sung Lee, | 한국물리학회 | 2007 ,
213
Critical Couplings ifn Crystalline Color Superconductivity
Critical Couplings ifn Crystalline Color Superconductivity
Dong Ki Hong, | 한국물리학회 | 2007 ,
214
The role of H₂ in the Growth of Carbon Nanotubes on an AAO Template
The role of H₂ in the Growth of Carbon Nanotubes on an AAO Template
Yong Sook Shin, | 한국물리학회 | 2007 ,
215
Development of a Beam-Profile Monitor for Cyclotron MC50
Development of a Beam-Profile Monitor for Cyclotron MC50
K. H. Park, | 한국물리학회 | 2007 ,
216
Passivation Properties of Inorganic Composite Films Packed Around Ca Cells by Electron-Beam Evaporation Technique
Passivation Properties of Inorganic Composite Films Packed Around Ca Cells by Electron-Beam Evaporation Technique
J.-Y. Yang, | 한국물리학회 | 2007 ,
217
Transport Study of Lambda DNA Molecules
Transport Study of Lambda DNA Molecules
J. S. Hwang, | 한국물리학회 | 2007 ,
218
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon, | 한국물리학회 | 2007 ,
219
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Dong Ho Kim, | 한국물리학회 | 2007 ,
220
Growth of a GaN Epilayer on a Si (111) Substrate by Using an AIN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector
Growth of a GaN Epilayer on a Si (111) Substrate by Using an AIN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector
T. K. Kim, | 한국물리학회 | 2007 ,
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