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211
Catalytic Degradation Of Waste High-Density Polyethylene into Liquid Product
Catalytic Degradation Of Waste High-Density Polyethylene into Liquid Product
Kyong Hwan Lee, | 대한환경공학회 | 2005 ,
212
Single-source Precursor Based ZnSe Thin Film Preparation through MOCVD Method
Single-source Precursor Based ZnSe Thin Film Preparation through MOCVD Method
Kook Won Seo, | 대한화학회 | 2006 ,
213
Preparation of CdS Thin Films through MOCVD Method, Using Cd-S Single-source Precursors
Preparation of CdS Thin Films through MOCVD Method, Using Cd-S Single-source Precursors
Seok Hwan Yoon, | 대한화학회 | 2006 ,
214
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
215
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Byoung-Gon Yu, | 대한전자공학회 | 2002 ,
216
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
217
A New EEPROM with Side Floating Gates having Different Work Function from Control Gate
A New EEPROM with Side Floating Gates having Different Work Function from Control Gate
Youngjoon Ahn, | 대한전자공학회 | 2002 ,
218
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Ho Won Jang, | 대한전자공학회 | 2003 ,
219
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
220
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Sung-Woong Chung, | 대한전자공학회 | 2004 ,
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