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171
A delay partitioning approach to delay-range-dependent stability analysis of fuzzy systems
A delay partitioning approach to delay-range-dependent stability analysis of fuzzy systems
Song, M. K, | 제어자동화시스템공학회 | 2011 ,
172
Synthesis of Nano-sized Iron for Reductive Dechlorination - 2. Effects of Synthesis Conditions on Iron Reactivities -
Synthesis of Nano-sized Iron for Reductive Dechlorination - 2. Effects of Synthesis Conditions on Iron Reactivities -
Ho Cheol Song, | 대한환경공학회 | 2005 ,
173
Synthesis of Nano-sized Iron for Reductive Dechlorination - 1. Comparison of Aerobic vs. Anaeriobic Synthesis and Characterization of Nanoparticles -
Synthesis of Nano-sized Iron for Reductive Dechlorination - 1. Comparison of Aerobic vs. Anaeriobic Synthesis and Characterization of Nanoparticles -
Ho Cheol Song, | 대한환경공학회 | 2005 ,
174
Aggregation-Induced Emission Enhancement of Polysilole Nanoaggregates
Aggregation-Induced Emission Enhancement of Polysilole Nanoaggregates
Seunghyun Jang, | 대한화학회 | 2006 ,
175
4H-SiC Planar MESFET for Microwave Power Device Applications
4H-SiC Planar MESFET for Microwave Power Device Applications
Hoon Joo Na, | 대한전자공학회 | 2005 ,
176
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Wanjun Park, | 대한전자공학회 | 2002 ,
177
On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications
On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications
Youn S. Noh, | 대한전자공학회 | 2003 ,
178
Process Optimization for High Frequency Performance of InP-Based Heterojunction Bipolar Transistors
Process Optimization for High Frequency Performance of InP-Based Heterojunction Bipolar Transistors
Yongjoo Song, | 대한전자공학회 | 2003 ,
179
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
I-H.Kang, | 대한전자공학회 | 2003 ,
180
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
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